Acta Phys. -Chim. Sin. ›› 2006, Vol. 22 ›› Issue (11): 1431-1434.doi: 10.3866/PKU.WHXB20061125

• Note • Previous Articles    

Luminescence Properties of As-doping ZnO Nanowires

PAN Guang-Hu;ZHANG Qi-Feng;ZHANG Jun-Yan;WU Jin-Lei   

  1. Department of Electronics, Peking University, Beijing 100871, P. R. China
  • Received:2006-03-29 Revised:2006-08-02 Published:2006-11-06
  • Contact: WU Jin-Lei

Abstract: The As-doping ZnO nanowires were synthesized via a chemical vapor deposition method. SEM, EDX, and HRTEM measurements demonstrated that ZnO nanowires possessed good crystal structures. The luminescence spectra had two emission peaks at about 385 nm and 505 nm. As-doping had effect on the luminescence property of ZnO nanowires, the emission peak at 385 nm shifted to 393 nm, and the intensity of the emission peak at 505 nm increased distinctly.

Key words: ZnO nanowires, Doping, Luminescence