Acta Phys. -Chim. Sin. ›› 1997, Vol. 13 ›› Issue (11): 965 -968 .doi: 10.3866/PKU.WHXB19971102

• Communication • Previous Articles     Next Articles

On the Etching Revolution of Electrochemical Micro-(Nano-) Fabrication Technique—Its Limit and Solution

Zu Yan-Bing,Xie Lei,Luo Jin,Mao Bing-Wei,Tian Zhao-Wu   

  1. State Key Laboratory for Physical Chemistry of the Solid Surface,Department of Chemistry,Xiamen University,Xiamen 361005
  • Received:1997-08-11 Revised:1997-09-24 Published:1997-11-15
  • Contact: Zu Yan-Bing

Abstract:

 The etching resolution of electrochemical fabrication technique is influenced significantly by the diffusion layer of the etchant. It has been shown that a fast etching rate can achieve higher etching resolution due to so-called heterogeneous scavenging effect, while a lower etching rate will result in rather lower etching resolution. For the latter case, the confined etchant layer technique(CELT) has been employed to improve the etching resolution. i. e., a certain redox couple which can consume the etchant homogeneously and rapidly was added to the solution. The homogeneous scavenging effect confined the etchant within a narrow layer around the electrode surface and much improved etching resolution was achieved. Using the CELT and a needle-shaped microelectrode, an etching spot of several micro-meters was obtained at silicon wafer surface.

Key words: Micro-(nano-)fabrication, Scanning electrochemical microscopy, Confined etchant layer technique, Silicon