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ISSN 1000-6818CN 11-1892/O6CODEN WHXUEU
Acta Phys Chim Sin >> 1995,Vol.11>> Issue(03)>> 234-241     doi: 10.3866/PKU.WHXB19950310         中文摘要
The Preparation of A |Model Nb Oxide Catalyst Epitaxially Grown
Xie Lei, Wang De-Zheng, Wei Xu-Ming, Cao Yu-Ming, Guo Xie-Xian, Ushikubo T, Wada K
State Key Laboratory on Catalysis,Dalian Institute of Chemical Physics Chinese Academy of Sciences,Dalian 116023|Mitsubishi Kasei Corporation,Research Center 1000,Kamoshida-cho,Midori-ku,Yokohama 227,Japan
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Metal oxides are useful catalytic materials but are not well understood due to a scarcity of fundamental studies. They are rarely available as single crystals and their insulator nature causes charging problems when electrons or ions are probes. We report the use of a technique to overcome these problems by anepitaxial growth onto a dissimilar metal to study the solid add niobium oxide. The model niobium oxide grew epitaxially on a single crystal Pt(111) substrate. The growth mode of the niobium oxide overlayers indicates that the overlayer grows as a 2D monolayer on the Pt substrate followed by the development of a high density of small 3D crystallites. LEED patterns from the niobium oxide overlayer indicate that the small crystallites of niobium oxide grew with the (111) structure of the Pt(111) substrate. The valence states of Nb of our model niobium oxide were determined from AES and ILS (ionization loss spectroscopy, which gives information similar to XPS) chemical shifts. Nb oxide overlayers could segregate into bulk Pt and decompose at high tempetature. This Nb oxide overlayers will be used as a model Nb oxide catalyst.



Keywords: Eqitaxial growth   Nb oxide   Model catalyst   Crystal film  
Received: 1994-02-09 Accepted: 1994-06-04 Publication Date (Web): 1995-03-15
Corresponding Authors: Wei Xu-Ming Email:


Cite this article: Xie Lei, Wang De-Zheng, Wei Xu-Ming, Cao Yu-Ming, Guo Xie-Xian, Ushikubo T, Wada K. The Preparation of A |Model Nb Oxide Catalyst Epitaxially Grown[J]. Acta Phys. -Chim. Sin., 1995,11 (03): 234-241.    doi: 10.3866/PKU.WHXB19950310
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