Acta Phys. -Chim. Sin. ›› 1994, Vol. 10 ›› Issue (04): 363-366.doi: 10.3866/PKU.WHXB19940415

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Collisional Quenching of Electronically Excited CH Radicals by Ar, NO and CHBr3 Molecules

Chen Cong-Xiang, Ran Qin, Yu Shu-Qin, Ma Xing-Xiao   

  1. Department of Chemistry Physics, University of Science and Technology of China, Hefei 230026
  • Received:1992-09-02 Revised:1993-01-20 Published:1994-04-15
  • Contact: Chen Cong-Xiang


The collisional quenching rate constants of CH(A, V'=0) by Ar and CHBr_3 and CH(A, B, V'=0) by NO molecule were measured by means of laser photolysis of CHBr_3 molecule at 266 nm generating CH(A, B) radicals and monitoring the time-resolved signal of ethession CH(A, B→X). The dependence of quenching rate constant of CH(A, V'=0) by CHBr_3 on rotational state of CH(A) is presented. It is found that the quenching rate decreases with increasing rotational quantum number of CH(A).

Key words: CH radical, Quenching, Ar, NO, CHBr3