Acta Phys. -Chim. Sin. ›› 1994, Vol. 10 ›› Issue (03): 260-265.doi: 10.3866/PKU.WHXB19940313

• ARTICLE • Previous Articles     Next Articles

Effect of VA Elements on the Semiconducting Properties of the Anodic Plumbous Oxide Film (I)

Pu Cong, Zhou Wei-Fang   

  1. Department of Chemistry, Fudan University, Shanghai 200433
  • Received:1992-09-04 Revised:1993-03-05 Published:1994-03-15
  • Contact: Zhou Wei-fang


The semiconducting properties of the anodic plumbous oxide films formed on lead, lead-arsenic, lead-antimony and lead-bismuth alloys in 4.5 mol·L~(-1) H_2SO_4 (20 ℃) at 0.9 V (vs. Hg/Hg_2SO_4) for 2 h have been studied using a. c. impedance method. From the Mott-Schottky plots, the films are demonstrated to be n-type senilconductors. The flat-band potentials of the films on Pb, Pb-lat %As, Pb-lat %Sb and Pb-lat %Bi are -0.95, -1.1, -1.0 and -1.1 V(vs. Hg/Hg_2SO_4), respectively; while the corresponding donor densities are 0.82×10~(16), 2.6×10~(16), 1.2×10~(17) and 0.71×10~(16) cm~(-3).

Key words: Anodic plumbous oxide film, Semiconductor, Electrochemical impedance method, Hauffe rules