Acta Phys. -Chim. Sin. ›› 1993, Vol. 9 ›› Issue (06): 791-794.doi: 10.3866/PKU.WHXB19930613

• ARTICLE • Previous Articles     Next Articles

Pulsed Light-induced Transient Behavior at n-InP Electrode in Fe3+/Fe2+(IV)

Qian Dao-Sun; Zhu Zhen-Hua; Wang Ping-Chuan   

  1. Department of Applied Chemistry, Shanghai Jiao Tong Univeristy, Shanghai 200240
  • Received:1992-05-25 Revised:1992-10-20 Published:1993-12-15
  • Contact: Qian Dao-Sun

Abstract: In this work, the influence of temperature, wavelength and surface treatment on the transient behavior of n-InP in Fe~(3+)/Fe~(2+) solution with pulsed light technique is investigated.
The wavelength does not influence the time constant of the transient curve. The peak pho-tovoltage decreases when the temperature increases, it is similar to the silicon cell. The decay of photovoltage-time curve is rapid with temperature because of increasing of the back diffusion rate. If the electrode is polished by emerg parper, the peak valus drops and the decay of the curve is very rapid, it can be restored by treatment with H_2SO_4+H_2O_2 (1:1) etching solution continuousely, this phenomenon can be explained by surface states.

Key words: Indium phosphide, Semiconducting electrode, Photoelectrochemistry, Pulsed light transient technique