Acta Phys. -Chim. Sin. ›› 2004, Vol. 20 ›› Issue (03): 256-259.doi: 10.3866/PKU.WHXB20040308

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Preparation and Structure of Boron Carbide Nanowires

Wei Jin-Quan;Jiang Bin;Li Yan-Hui;Wu De-Hai   

  1. Department of Mechanical Engineering, Tsinghua University, Beijing 100084
  • Received:2003-08-21 Revised:2003-11-06 Published:2004-03-15
  • Contact: Wei Jin-Quan E-mail:jqwei99@mails.tsinghua.edu.cn

Abstract: To obtain boron carbide nanowire, the mixture of carbon nanotubes and boron powder is heated to 1000~1100 ℃ for 30~60 min. The results of transmission electronic microscopy examination show that most of the carbon nanotube in our sample transfer into straight boron carbide nanowire. The structure of the nanowire is studied by the selected area electronic diffraction (SAED) and HRTEM, which shows that most of the nanowire is B4C nanowire. There is a nickel particle at the end of some boron carbide nanowires. The nickel particles come from the catalyst encapsulated in the hollow of the carbon nanotube. The growing mechanism of the boron carbide nanowire is discussed. Carbon nanotube acts as template for the growth of boron carbide nanowire. During the reaction, boron atoms replace some sites of the carbon in the nanotube, resulting in reconstructing the crystal of the nanotube and mending the defects in the carbon nanotube.

Key words: Carbon nanotubes, Boron carbide nanowires, Doping