Acta Phys. -Chim. Sin. ›› 2006, Vol. 22 ›› Issue (09): 1147-1150.doi: 10.3866/PKU.WHXB20060922

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Silicon Nanowires Produced by SiO-Au Method

PAN Guo-Wei   

  1. Department of Physics, Zhejiang University, Hangzhou 310027, P. R. China
  • Received:2006-01-20 Revised:2006-04-05 Published:2006-09-04
  • Contact: PAN Guo-Wei E-mail:zjupgw@sohu.com

Abstract: Large-scale silicon nanowires (SiNWs), which consist of a crystalline silicon core and a thick oxide shell with a length of tens of micrometers, were synthesized by evaporation of silicon monoxide (SiO) using a gold-coated silicon wafer as substrate in a low vacuum CVD system. The morphology and structure of the nanowires were inspected and analyzed by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), selected electron diffraction (SAED), and Raman spectroscopy. The experimental results indicated the quality of silicon nanowires (SiNWs) varied with different growth temperatures, and it was found that the SiNWs produced at 700 ℃ zone had a well-crystallized structure. Compared with the Raman peak of the first-order transverse optical phonon mode (TO) at 520.3 cm−1 for bulk silicon, the corresponding peak for as-grown SiNWs redshifted to 514.8 cm−1.

Key words: SiO-Au method, Silicon Nanowires (SiNWs), Preparation