Acta Phys. -Chim. Sin. ›› 2001, Vol. 17 ›› Issue (09): 769-772.doi: 10.3866/PKU.WHXB20010901

• Communication •     Next Articles

Comparative about the STM Thermochemical Hole Burning of DEA(TCNQ)2 and TEA(TCNQ)2

Lei Xiao-Jun;Chen Hai-Feng;Liu Zhong-Fan   

  1. Center of Nanoscale Science & Technology,College of Chemistry and Molecular Engineering,Peking University,Beijing 100871
  • Received:2001-04-17 Revised:2001-06-20 Published:2001-09-15
  • Contact: Liu Zhong-Fan E-mail:lzf@chem.pku.edu.cn

Abstract: The thermochemical hole burning properties of two different charge transfer complexes,DEA(TCNQ)2 and TEA(TCNQ)2,were studied in this work.It shows that the data writing on DEA(TCNQ)2 needs a larger threshold voltage compared with TEA(TCNQ)2,and that the DEA(TCNQ)2 gives a smaller hole size and a higher depth/diameter ratio,demonstrating the possibility of optimizing the storage performance with a suitable molecular design.

Key words: STM, Data storage, Thermochemical Hole Burning, Storage material