Acta Phys. -Chim. Sin. ›› 2003, Vol. 19 ›› Issue (07): 641-646.doi: 10.3866/PKU.WHXB20030715

• ARTICLE • Previous Articles     Next Articles

A Study of Interface Diffusion and Reaction of Ti/ZrN2/Si Film

Wang Li;Yin Mu-Sheng;Zhu Yong-Fa   

  1. Department of Chemistry, Tsinghua University, Beijing　100084
  • Received:2002-12-26 Revised:2003-03-17 Published:2003-07-15
  • Contact: Zhu Yong-Fa E-mail:zhuyf@chem.tsinghua.edu.cn

PDF (PC)

2883

Like

Abstract: Ti/ZrN2 multiplayer was deposited on silicon wafer using DC magnetron sputtering method. Interface diffusion and chemical states at interfaces were investigated using line shape analysis along with depth profile analysis of Auger electron spectroscopy (AES). Interface diffusion was performed during deposition of thin film and can be intensified by thermal treatment in vacuum. Interface reaction also can be promoted by thermal treatment, and TiNx and SiNx species were formed at interface respectively.

Key words: Interface diffusion and reaction, Ti/ZrN2/Si, Auger electron spectroscopy(AES)