Acta Phys. -Chim. Sin. ›› 2011, Vol. 27 ›› Issue (08): 1893-1899.doi: 10.3866/PKU.WHXB20110832

• ELECTROCHEMISTRY AND NEW ENERGY • Previous Articles     Next Articles

Indolium Squarine Semiconductor for Field-Effect Transistors

SUN Qiu-Jian, DONG Gui-Fang, ZHENG Hai-Yang, ZHAO Hao-Yan, QIAO Juan, DUAN Lian, WANG Li-Duo, ZHANG Fu-Shi, QIU Yong   

  1. Key Laboratory of Organic Optoelectronics & Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, P. R. China
  • Received:2011-05-11 Revised:2011-06-15 Published:2011-07-19
  • Contact: DONG Gui-Fang, QIU Yong E-mail:donggf@mail.tsinghua.edu.cn. qiuy@mail.tsinghua.edu.cn
  • Supported by:

    The project was supported by the National Natural Science Foundation of China (60877026, 50990062) and National Key Basic Research and Development Program of China (973) (2009CB930602).

Abstract:

An indolium squarine 1,3-bis[(3,3-dimethylindolin-2-ylidene)methyl]squaraine was investigated as a semiconductor for use in organic field-effect transistors. Intramolecular charge separation and face to face packing were found by X-ray crystallography. p-Type thin film transistors were fabricated on Si/SiO2 substrates by thermal evaporation and spin-coating. By channel state research we found that annealing could improve the polycrystallization of the semiconductor film from the amorphous state and device mobility improved from 10-5 to 10-5 cm2·V-1·s-1. The highest mobility of 7.8×10-2 cm2·V-1·s-1 was achieved in a top contact single crystal device. ISQ transistors were also stable in air without encapsulation.

Key words: Squarylium inner salt, Organic transistor, Spin coating, Single crystal, Annealing

MSC2000: 

  • O646