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ISSN 1000-6818CN 11-1892/O6CODEN WHXUEU
Acta Phys Chim Sin >> 2011,Vol.27>> Issue(12)>> 2831-2835     doi: 10.3866/PKU.WHXB20112831         中文摘要
ELECTROCHEMISTRY AND NEW ENERGY
Photoelectrochemical Properties of Graphene Oxide Thin Film Electrodes
ZHANG Xiao-Yan, SUN Ming-Xuan, SUN Yu-Jun, LI Jing, SONG Peng, SUN Tong, CUI Xiao-Li
Department of Materials Science, Fudan University, Shanghai 200433, P. R. China
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A series of graphene oxide (GO) thin films were prepared by a dip-coating method and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier-transform infrared (FTIR) spectroscopy, ultraviolet-visible (UV-Vis) light absorption, and photoelectrochemical measurements. A cathodic photocurrent was observed for the GO electrodes and the photocurrent density was influenced by the thickness of the films. The GO film electrode with an average thickness of 27 nm gave a photocurrent density of 0.25 μA·cm-2. The photoresponse of the GO electrodes was found to be influenced by UV irradiation and the cathodic photocurrent decreased gradually with UV irradiation time. This work provides a simple method to change the photoelectrochemical property of GO films by controlling the film thickness or UV irradiation time.

Keywords: Graphene oxide   Photoelectrochemical property   Cathodic photocurrent   Film thickness   UV irradiation  
Received: 2011-06-09 Accepted: 2011-09-05 Publication Date (Web): 2011-09-15
Corresponding Authors: CUI Xiao-Li Email: xiaolicui@fudan.edu.cn

Fund: The project was supported by the National Key Basic Research Program of China (973) (2011CB933302, 2010CB933703), Shanghai Science and Technology Commission, China (1052nm01800), and Key Disciplines Innovative Personnel Training Plan of Fudan University, China.

Cite this article: ZHANG Xiao-Yan, SUN Ming-Xuan, SUN Yu-Jun, LI Jing, SONG Peng, SUN Tong, CUI Xiao-Li. Photoelectrochemical Properties of Graphene Oxide Thin Film Electrodes[J]. Acta Phys. -Chim. Sin., 2011,27 (12): 2831-2835.    doi: 10.3866/PKU.WHXB20112831
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