Acta Phys. -Chim. Sin. ›› 2015, Vol. 31 ›› Issue (6): 1113-1117.doi: 10.3866/PKU.WHXB201503192

• ELECTROCHEMISTRY AND NEW ENERGY • Previous Articles     Next Articles

Application of a Simplified Diode Characteristic Model in Current-Voltage Curve Fitting and Evaluation of Photoelectric Parameters within Dye-Sensitized Solar Cell

ZHANG Ping, WANG Yi, FU Li-Min, AI Xi-Cheng, ZHANG Jian-Ping   

  1. Department of Chemistry, Renmin University of China, Beijing 100872, P. R. China
  • Received:2015-02-09 Revised:2015-03-18 Published:2015-06-05
  • Contact: FU Li-Min E-mail:lmfu@ruc.edu.cn
  • Supported by:

    The project was supported by the National Natural Science Foundation of China (21133001, 20933010) and Fundamental Research Funds for the Central Universities of China (10XNI007).

Abstract:

In the present work, we investigated the dynamics of charge collection and recombination in dyesensitized solar cells (DSSCs) spanning a large region of bias voltages using transient photoconductivity. The rate of charge collection was much faster than that of charge recombination at varied voltages, which was responsible for the nearly uniform charge collection efficiency. Based on this result, we simplified the diode characteristic model, which allowed us to directly fit the current-voltage (I-V) curve. A series of parameters related to the photo-to-electric processes in working DSSCs could be extracted from the proposed model, which could be used to evaluate the processes of charge generation, transport, and recombination in DSSCs, as well as the rectification of DSSC devices. We applied the fitting method to DSSCs with different 4-tert-butyl pyridine (TBP) concentrations of electrolyte. It was found that the rate of charge recombination significantly differed while that of charge collection was rather constant under different TBP concentrations, which was in good agreement with the results of I-V curve fitting. In addition, this research shows that the change of TBP concentration significantly affects the ideality factor (m) of DSSC devices.

Key words: Series resistance, Shunt resistance, I-V curve, 4-tert-butylpyridine, Ideality factor

MSC2000: 

  • O649