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ISSN 1000-6818CN 11-1892/O6CODEN WHXUEU
Acta Phys Chim Sin >> 2017,Vol.33>> Issue(1)>> 249-254     doi: 10.3866/PKU.WHXB201610142         中文摘要
CH3NH3PbI3 Single Crystal-Based Ambipolar Field-Effect Transistor with Ta2O5 as the Top Gate Dielectric
LÜ Qian-Rui, LI Jing, LIAN Zhi-Peng, ZHAO Hao-Yan, DONG Gui-Fang, LI Qiang, WANG Li-Duo, YAN Qing-Feng
Department of Chemistry, Tsinghua University, Beijing 100084, P. R. China
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Organic-inorganic hybrid perovskite methylammonium lead iodide (CH3NH3PbI3) generally tends to show n-type semiconductor properties. In this work, a field-effect transistor (FET) device based on a CH3NH3PbI3 single crystal with tantalum pentoxide (Ta2O5) as the top gate dielectric was fabricated. The p-type field-effect transport properties of the device were observed in the dark. The hole mobility of the device extracted from transfer characteristics in the dark was 8.7×10-5 cm2·V-1·s-1, which is one order of magnitude higher than that of polycrystalline FETs with SiO2 as the bottom gate dielectric. In addition, the effect of light illumination on the CH3NH3PbI3 single-crystal FET was studied. Light illumination strongly influenced the field effect of the device because of the intense photoelectric response of the CH3NH3PbI3 single crystal. Different from a CH3NH3PbI3 polycrystalline FET with a bottom gate dielectric, even with the top gate dielectric shielding, light illumination of 5.00 mW·cm-2 caused the hole current to increase by one order of magnitude compared with that in the dark (VGS (gate-source voltage)=VDS (drain-source voltage)=20 V) and the photoresponsivity reached 2.5 A·W-1. The introduction of Ta2O5 as the top gate dielectric selectively enhanced hole transport in the single-crystal FET, indicating that in the absence of external factors, by appropriate device design, CH3NH3PbI3 also has potential for use in ambipolar transistors.



Keywords: Perovskite   Tantalum pentoxide   Field-effect   Mobility   Light illumination  
Received: 2016-08-22 Accepted: 2016-10-14 Publication Date (Web): 2016-10-14
Corresponding Authors: DONG Gui-Fang, YAN Qing-Feng Email: donggf@mail.tsinghua.edu.cn;yanqf@mail.tsinghua.edu.cn

Fund: The project was supported by the National Natural Science Foundation of China (51173097, 91333109), National Key Basic Research Program of China (2013CB632900), Tsinghua University Initiative Scientific Research Program, China (20131089202, 20161080165), and Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics, China (KF201516).

Cite this article: Lü Qian-Rui, LI Jing, LIAN Zhi-Peng, ZHAO Hao-Yan, DONG Gui-Fang, LI Qiang, WANG Li-Duo, YAN Qing-Feng. CH3NH3PbI3 Single Crystal-Based Ambipolar Field-Effect Transistor with Ta2O5 as the Top Gate Dielectric[J]. Acta Phys. -Chim. Sin., 2017,33 (1): 249-254.    doi: 10.3866/PKU.WHXB201610142

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