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Acta Phys. -Chim. Sin.  2017, Vol. 33 Issue (10): 2092-2098    DOI: 10.3866/PKU.WHXB201705114
Preparation of Indium-Zinc-Oxide Thin Film Transistors by Hot-Pressing Sintering Target
SONG Er-Long, LAN Lin-Feng, LIN Zhen-Guo, SUN Sheng, SONG Wei, LI Yu-Zhi, GAO Pei-Xiong, ZHANG Peng, PENG Jun-Biao
State Key Laboratory of Luminescence Materials and Devices, South China University of Technology, Guangzhou 510640, P. R.China
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The sintering condition was studied how to influence the performance of indium-zinc-oxide (IZO) target and thin film transistor (TFT) in this paper. IZO targets was prepared by hot-pressing sintering using mixed power (20% (w, mass fraction) In2O3), then fabricated TFT with above sintering targets. X-ray diffraction (XRD) patterns & scanning electron microscopy (SEM) images showed targets had good crystallinity and elements were uniformly distributed. The target was typical densification process with sintering temperature of 850 ℃. The volatilization of In2O3 undermined the densification of the target, with condition of 900 ℃-60 min. It can be seen that increase of sintering temperature and elongation of preserving time could inhibit the In2O3 volatilization, facilitated the sintering densification of IZO target and formed the InZnOx crystal phase, thereby increased the density of the target. IZO TFTs′ performance showed the sputtering deteriorates the film quality with low-density target, and the grain of the high-density target was slightly abnormal, which resulted in deterioration of the film uniformity, all reduced the performance of TFT. Therefore, an appropriate high-density target was essential for the preparation of IZO-TFT."

Key wordsThin film transistors      IZO      Hot-pressing sintering      Target      Magnetron sputtering     
Received: 13 March 2017      Published: 11 May 2017

The project was supported by the National Key Research Program of China (2016YFB0401105), National Natural Science Foundation of China (61204087), Pearl River S&T Nova Program of Guangzhou, China (2014J2200053) and Guangdong Province Science and Technology Plan, China (2015B090914003).

Corresponding Authors: LAN Lin-Feng     E-mail:
Cite this article:

SONG Er-Long, LAN Lin-Feng, LIN Zhen-Guo, SUN Sheng, SONG Wei, LI Yu-Zhi, GAO Pei-Xiong, ZHANG Peng, PENG Jun-Biao. Preparation of Indium-Zinc-Oxide Thin Film Transistors by Hot-Pressing Sintering Target. Acta Phys. -Chim. Sin., 2017, 33(10): 2092-2098.

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(1) Park, J. S.; Kim, T. W.; Stryakhilev, D.; Lee, J. S.; An, S. G.; Pyo, Y. S.; Lee, D. B.; Mo, Y. G.; Jin, D. U.; Chung, H. K. Appl. Phys. Lett. 2009, 95, 13503. doi: 10.1063/1.3159832
(2) Riedl, T.; Gorrn, P.; Kowalsky, W. J. Disp. Technol. 2009, 12 (5), 501. doi: 10.1109/JDT.2009.2023093
(3) Oh, S.; Bong, S.; Yang, Y.; Kim, U. K.; Sang, J.; Han, H.; Kim, S.; Jeong, J. K.; Kim, H J. J. Phys. D: Appl. Phys. 2014, 47, 165103. doi: 10.1088/0022-3727/47/16/165103
(4) Park, H. W.; Song, A. R.; Kwon, S.; Ahn, B. D.; Chung, K. B. Appl. Phys. Express 2016, 9, 111101. doi: 10.7567/APEX.9.111101
(5) Nomura, K.; Ohta, H.; Takagi, A.; Kamiya, T.; Hirano, M.; Hosono, H. Nature 2004, 432, 488. doi :10.1038/nature03090
(6) Fortunato, E.; Barquinha, P.; Martins, R. Adv. Mater. 2012, 24, 2945. doi: 10.1002/adma.201103228
(7) Lan, L. F.; Zhang, P.; Peng, J. B. Acta Phys. Sin. 2016, 65 (12), 128504. [兰林锋, 张鹏, 彭俊彪. 物理学报 2016, 65 (12), 128504.] doi: 10.7498/aps.65.128504
(8) Wang, X. Y.; Dong, G. F.; Qiao J.; Wang, L. D.; Qiu, Y. Acta Phys. -Chim. Sin. 2010, 26 (01), 249. [王小燕, 董桂芳, 乔娟, 王立铎, 邱勇. 物理化学学报, 2010, 26 (1), 249.]doi: 10.3866/PKU.WHXB20100101
(9) Leenheer, A. J.; Perkins, J. D.; Van Hest, M. F.; Berry, J. J.; O'Hayre, R. P.; Ginley, D. S. Phys. Rev. B 2008, 77 (12), 115215. doi: 10.1103/PhysRevB.77.115215
(10) Taylor, M. P.; Readey, D. W.; van Hest, M. F. A. M.; Teplin, C. W.; Alleman, J. L.; Dabney, M. S.; Gedvilas, L. M.; Keyes, B. M.; To, B.; Perkins, J. D.; Ginley, D. S. Adv. Funct. Mater. 2008, 18, 3169. doi: 10.1002/adfm.200700604
(11) Zhang, G. M.; Guo, L. Q.; Zhao, K. S.; Yan, Z. H. Acta Phys. Sin. 2013, 62 (13), 137201. [张耕铭, 郭立强, 赵孔胜, 颜钟惠. 物理学报, 2013, 62 (13), 137201.]doi: 10.7498/aps.62.137201
(12) Li, Y.; Sun, C. W.; Liu, Z. W.; Zhang, Q. Y. Acta Phys. Sin. 2006, 55 (8), 4232. [李勇, 孙成伟, 刘志文, 张庆瑜. 物理学报, 2006, 55 (8), 4232.]doi: 1000-3290/2006/55(08)/4232-05
(13) Asmar, R. A.; Ferblantier, G.; Mailly, F.; Gall, B. P.; Foucaran, A. Thin Solid Films 2005, 473, 49. doi: 10.1016/j.tsf.2004.06.156
(14) Zhao, J.; Hu, L.; Liu, W.; Wang, Z. Appl. Surf. Sci. 2007, 253, 6255. doi: 10.1016/j.apsusc.2007.01.089
(15) Tominaga, K.; Murayama, T.; Umezu, N.; Mori, I.; Ushiro, T.; Moriga, T.; Nakabayashi, I. Thin Solid Filnls 1999, 343, 160.
(16) Ni, J. M.; Cheng, J. J. Hubei Univ. Educ. 2012, 29 (2), 71.[倪佳苗, 程娟. 湖北第二师范学院学报, 2012, 29 (2), 71.]
(17) Song, E. L.; Lan, L. F.; Xiao, P.; Lin, Z. G.; Sun, S.; Li, Y.Z.; Song, W.; Gao, P. X.; Peng, J. B. IEEE Trans. Electron Devices 2016, 63 (5), 1916. doi: 10.1109/TED.2016.2543023
(18) Hua, X.; Lan, L. F.; Li, M.; Luo, D. X.; Xiao, P.; Lin, Z. G.; Ning, H. L.; Peng, J. B. Acta Phys. Sin. 2014, 63 (03), 452.[徐华, 兰林锋, 李民, 罗东向, 肖鹏, 林振国, 宁洪龙, 彭俊彪. 物理学报, 2014, 63 (03), 452.] doi:10.7498/aps.63.038501
(19) Guo, W.; Wang, W. M.; Wang, H.; Wang, Y. C.; Fu, Z. Y. Adv. Mater. Res. 2009, 66, 96. doi: 10.4028/
(20) Guo, S. J. Powder sintering theory; Metallurgical IndustryPress: Beijing, 1998; p 11. [果世驹. 粉末烧结理论. 北京:冶金工业出版社, 1998: 11.]
(21) Liu, L. J. Preparation of Zinc Oxide Ceramic Target. M.S. Dissertation, Hebei University of Technology, Tianjin, 2008. [刘丽杰. 氧化锌陶瓷靶材的制备[D]. 天津: 河北工业大学, 2008.]
(22) Tong, Y. P.; Lai, X. H.; He, W. L. China Ceram. Ind. 2013, 20 (2), 6. [童义平, 赖秀红, 何午琳. 中国陶瓷工业, 2013, 20 (2), 6.
(23) Son, K. Y.; Park, D. H.; Lee, J. H.; Kim, J. J.; Lee, J. S. Solid State Ionics 2004, 172, 425. doi: 10.1016/j.ssi.2004.03.028
(24) Wu, M. W.; Chang, S. H.; Chaung, W. M.; Huang, H. S. J. Eur. Ceram. Soc. 2015, 35, 3893. doi: 10.1016/j.jeurceramsoc.2015.06.029
(25) Bai, X.; Wang, X. M.; Han, C.; Chu, M. Y.; Duo, H. Y.; Sun, J. Chin. J. Rare Met. 2011, 35 (6), 892. [白雪, 王星明, 韩仓, 储茂友, 段华英, 孙静. 稀有金属, 2011, 35 (6), 892.] doi: 10.3969/j.issn.0258-7076. 2011.06.01

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