ISSN 1000-6818CN 11-1892/O6CODEN WHXUEU
Acta Phys Chim Sin >> 2017,Vol.33>> Issue(10)>> 2092-2098     doi: 10.3866/PKU.WHXB201705114         中文摘要
Preparation of Indium-Zinc-Oxide Thin Film Transistors by Hot-Pressing Sintering Target
SONG Er-Long, LAN Lin-Feng, LIN Zhen-Guo, SUN Sheng, SONG Wei, LI Yu-Zhi, GAO Pei-Xiong, ZHANG Peng, PENG Jun-Biao
State Key Laboratory of Luminescence Materials and Devices, South China University of Technology, Guangzhou 510640, P. R.China
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The sintering condition was studied how to influence the performance of indium-zinc-oxide (IZO) target and thin film transistor (TFT) in this paper. IZO targets was prepared by hot-pressing sintering using mixed power (20% (w, mass fraction) In2O3), then fabricated TFT with above sintering targets. X-ray diffraction (XRD) patterns & scanning electron microscopy (SEM) images showed targets had good crystallinity and elements were uniformly distributed. The target was typical densification process with sintering temperature of 850 ℃. The volatilization of In2O3 undermined the densification of the target, with condition of 900 ℃-60 min. It can be seen that increase of sintering temperature and elongation of preserving time could inhibit the In2O3 volatilization, facilitated the sintering densification of IZO target and formed the InZnOx crystal phase, thereby increased the density of the target. IZO TFTs′ performance showed the sputtering deteriorates the film quality with low-density target, and the grain of the high-density target was slightly abnormal, which resulted in deterioration of the film uniformity, all reduced the performance of TFT. Therefore, an appropriate high-density target was essential for the preparation of IZO-TFT."

Keywords: Thin film transistors   IZO   Hot-pressing sintering   Target   Magnetron sputtering  
Received: 2017-03-13 Accepted: 2017-04-20 Publication Date (Web): 2017-05-11
Corresponding Authors: LAN Lin-Feng Email:

Fund: The project was supported by the National Key Research Program of China (2016YFB0401105), National Natural Science Foundation of China (61204087), Pearl River S&T Nova Program of Guangzhou, China (2014J2200053) and Guangdong Province Science and Technology Plan, China (2015B090914003).

Cite this article: SONG Er-Long, LAN Lin-Feng, LIN Zhen-Guo, SUN Sheng, SONG Wei, LI Yu-Zhi, GAO Pei-Xiong, ZHANG Peng, PENG Jun-Biao. Preparation of Indium-Zinc-Oxide Thin Film Transistors by Hot-Pressing Sintering Target[J]. Acta Phys. -Chim. Sin., 2017,33 (10): 2092-2098.    doi: 10.3866/PKU.WHXB201705114

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