Supporting info
| 2022, Vol. 38(5): 2006016-0 DOI: 10.3866/PKU.WHXB202006016 | ||
| In Situ Growth and Characterization of TiN/HfxZr1-xO2/TiN Ferroelectric Capacitors | ||
Yuhao Yin1,2, Yang Shen1, Hu Wang1, Xiao Chen1, Lin Shao3, Wenyu Hua3, Juan Wang4, Yi Cui1,*( ) |
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| 1 Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, Jiangsu Province, China 2 Nano Science and Technology Institute, University of Science and Technology of China, Hefei 230026, China 3 Wuxi Petabyte Technology Co. Ltd., Wuxi 214028, Jiangsu Province, China 4 Department of Physics and Engineering Physics, The University of Tulsa, Tulsa, OK 74104, USA |
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| Received 2020-06-08 Revised null | ||
| Supporting info | ||
| Click here to download Supporting Info material in PDF type | ||