物理化学学报 >> 2004, Vol. 20 >> Issue (06): 565-568.doi: 10.3866/PKU.WHXB20040602

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含碘系列电荷转移复合物的热分解温度对烧孔阈值电压的影响

于学春;彭海琳;张然;张莹莹;刘忠范   

  1. 北京大学化学与分子工程学院, 北京大学纳米科学与技术研究中心, 北京　100871
  • 收稿日期:2004-02-03 修回日期:2004-03-11 发布日期:2004-06-15
  • 通讯作者: 刘忠范 E-mail:liuzf@cnst.pku.edu.cn

Influence of Decomposition Temperature on the Threshold Voltage for a Series of Charge Transfer Complexes

Yu Xue-Chun;Peng Hai-Lin;Zhang Ran;Zhang Ying-Ying;Liu Zhong-Fan   

  1. Center for Nanoscale Science and Technology(CNST), College of Chemistry ＆ Molecular Engineering, Peking University, Beijing　100871
  • Received:2004-02-03 Revised:2004-03-11 Published:2004-06-15

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摘要： 合成了5种含碘的电荷转移复合物,对其热化学烧孔性能进行了研究,在它们的单晶上成功写入了信息点阵.通过热重分析获得了5种材料的热分解温度,并测量了它们的烧孔阈值电压.结果表明,材料的热分解温度对烧孔阈值电压有明显影响.理论分析表明,阈值电压对热分解温度的依赖关系反映了活化能对热化学烧孔反应速度的影响.

关键词: 电荷转移复合物, 阈值电压, 热分解温度, 热化学烧孔反应, 活化能

Abstract: A series of charge transfer complexes containing iodine were synthesized and the thermochemical hole burning properties of these materials were investigated. Experimental results suggest that dot array can be written on the crystal surface of all these materials using scanning tunneling microscope. It was found that the decomposition temperature has remarkable influence on the threshold voltage for hole burning. This results from the fact that, the activation energy has strong influence on the hole burning reaction rate, and the decomposition temperature is a measure of the activation energy. The influence of decomposition temperature on the threshold voltage is consistent with the principle of material design of thermochemical hole burning.

Key words: Charge transfer complex, Threshold voltage, Decomposition temperature, 　Thermochemical hole burning reaction, Activation energy