物理化学学报 >> 2007, Vol. 23 >> Issue (03): 322-326.doi: 10.3866/PKU.WHXB20070308

研究论文 上一篇    下一篇

非晶SiO2纳米灯笼的制备和表征

邹兴权;吴萍;李强;肖潭   

  1. (汕头大学物理系, 广东 汕头 515063)
  • 收稿日期:2006-08-09 修回日期:2006-09-22 发布日期:2007-03-07
  • 通讯作者: 吴萍 E-mail:pwu@stu.edu.cn

Synthesis and Characterization of the Amorphous SiO2 Nano-Lantern

ZOU Xing-Quan;WU Ping;LI Qiang;XIAO Tan
  

  1. (Department of Physics, Shantou University, Shantou 515063, Guangdong Province, P. R. China)
  • Received:2006-08-09 Revised:2006-09-22 Published:2007-03-07
  • Contact: WU Ping E-mail:pwu@stu.edu.cn

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摘要： 在1000 ℃用活性炭把二氧化锡粉末还原成单质锡, 锡作为催化剂, 硅片作为硅源同时作为收集衬底, 在硅片上制备出了非晶SiO2纳米灯笼. 灯笼的一端连在硅片上, 另一端为一个锡球, 中间是一些圆弧状的SiO2纳米线把两端相连. 纳米灯笼具有良好的对称性. 利用扫描电子显微镜(SEM)、高分辨透射电子显微镜(HRTEM)、选区电子衍射(SAED) 和HRTEM自带的能谱分析仪(EDS)对样品的表面形貌、微观结构和成分进行了分析研究. 结果表明, 灯笼中SiO2纳米线为非晶态, 结点是晶态锡, 结点表面覆盖一层非晶态的硅的氧化物. 结合实验条件对纳米灯笼的生长机理进行了讨论, 提出了纳米灯笼生长的一个模型.

关键词: 纳米灯笼, 氧化硅纳米线, 气-液-固生长模式

Abstract: A Chinese lantern-like silicon oxide nanostructure (nano-lantern) was synthesized on the silicon substrate by thermal evaporation method. The nano-lantern was characterized by scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM), energy-dispersive spectroscope (EDS), and selective area electron diffraction (SAED). The results showed that the nano-lantern had symmetrical structure, with one end connecting with the silicon wafer and the other end being a tin ball. The diameter of the nano-lantern was about 1.5-3.0 μm, arc nanowires distributed between the two ends had a diameter ranging from 70 nm to 150 nm. The catalyst tin ball was a single crystal surrounded by the amorphous silicon oxide nanowires. In addition, the growth mechanism of the silica nano-lantern was discussed and a growth model was proposed. The growing direction of the nanowires and the movement direction of the catalyst Sn ball were not in the same direction, for this reason, the nanowires grew in a bent fashion and formed the Chinese lantern-like silicon oxide nanostructure. The controllable synthesis of the Chinese lantern-like silicon oxide nanostructure might have potential applications in photoelectronics device field.

Key words: Nano-lantern, Silicon oxide nanowire, Vapor-liquid-solid (VLS) growth mechanism