Acta Phys. -Chim. Sin. ›› 2004, Vol. 20 ›› Issue (06): 561-564.doi: 10.3866/PKU.WHXB20040601

• Communication •     Next Articles

The Dependence of Threshold Voltage on Pulse Duration for DPA(TCNQ)2

Yu Xue-Chun;Zhang Ran;Peng Hai-Lin;Zhang Ying-Ying;Liu Zhong-Fan   

  1. Center for Nanoscale Science and Technology(CNST), College of Chemistry ＆ Molecular Engineering, Peking University, Beijing　100871
  • Received:2004-02-04 Revised:2004-03-11 Published:2004-06-15
  • Contact: Liu Zhong-Fan E-mail:liuzf@cnst.pku.edu.cn

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Abstract: A binary charge transfer complex—dipropylamine tetracyanoquinodimethane(DPA(TCNQ)2) was synthesized. Using STM we studied the surface topography of the single crystal and observed the molecular arrangement of the ab plane. Section analysis indicates that the surface lattice constants are in nice agreement with the XRD data of the bulk lattice constants. We successfully wrote information dot array on the crystal surface with a writing probability of 100％. Experimental results indicate that pulse width has strong influence on the threshold voltage for hole formation. This result does not support the typical field-induced evaporation mechanism but strongly supports the thermochemical hole burning (THB) mechanism.

Key words: DPA(TCNQ)2, STM high resolution image, Field-induced evaporation, Thermochemical hole burning mechanism