Abstract:

The modified n~+/p-Si photoanode had been prepared by ion sputtering first with thickness of 4.0 nm platinum and then by electroplating a thin W-Ni alloy film. It was found that when this photoanode was illuminated with anodic bias (at 1.0 V vs. 1N HgO electrode) under cyclic voltammetric conditions, the photocurrent density might reach 46.4 mA cm~(-2). It was clear that W-Ni film appeared an excellent catalytic action for oxygen evolution. The surface of n~+/p-Si photoanode modified by double metal films had also been studied using methods of scanning electron microscopy and x-ray photoelectron spectro-scopy.