Acta Phys. -Chim. Sin. ›› 1999, Vol. 15 ›› Issue (04): 303-307.doi: 10.3866/PKU.WHXB19990404

• ARTICLE • Previous Articles     Next Articles

Band Bending of Cleaved InP(110) Surface

Deng Zong-Wu, Guo Wei-Min, Liu Huan-Ming, Cao Li-Li   

  1. Department of Chemistry,Tsinghua University,Beijing 100084;Department of Chemistry,The Chinese University of Hongkong|Department of Physics,The Chinese University of Hongkong
  • Received:1998-06-16 Revised:1998-08-26 Published:1999-04-15
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Abstract:

The dynamic surface band bending of cleaved InP(110) sample was investegated using in situ XPS analysis and the causes of band bending was discussed according to the experimental results. It was concluded that there is no intrinsic surface states in InP and neither the residual gas in UHV nor the X-Ray radiation causes the band bending, the band bending should be caused by the surface defects induced during the cleavage and lattice relaxation.

Key words: InP, Band bending, Dynamic process, XPS