Acta Phys. -Chim. Sin. ›› 2003, Vol. 19 ›› Issue (02): 97-99.doi: 10.3866/PKU.WHXB20030201

• Communication •     Next Articles

C－V Characteristics of Metal-Polysilane-Silicon Structures

Peng Zhi-Jian;Si Wen-Jie;Xie Mao-Nong;Fu He-Jian;Miao He-Zhuo   

  1. State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing　100084;Department of Physics,Department of Chemistry, Sichun University, Chengdu　610064
  • Received:2002-09-13 Revised:2002-11-12 Published:2003-02-15
  • Contact: Peng Zhi-Jian E-mail:pengzhijian00@mails.tsinghua.edu.cn

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Abstract: Metal-polysilane-silicon(MPS) structures were designed in this investigation. It was first discovered that the MPS structures possessed capacitance-voltage(C－V) characteristics, and the C－V characteristics were consistent with the branching densities of the polysilanes, i.e., with the increase in branching densities, the C－V curves drifted more dramatically towards the positive direction of the electrical voltage axis. The MPS structures may be promising in designing devices for the measurement of the branching densities of the branched polysilanes. Many of the flat-band voltages of the MPS structures were positive, which played positive roles in semiconductor devices.

Key words: Polysilane, Metal-polysilane-silicon structure, C－V characteristic curve, Flat-band voltage, Branching density