Abstract:

GaSb is an important compound semiconductor. This paper reports the etching of GaSb, and the formation and dissolution of the oxidized layer of GaSb using electrochemical and photoelectrochemical methods. The major composition of the GaSb oxidized layer was found to be antimony oxides which are difficult to dissolve in aqueous solution. This layer could prevent the surface from being further etched, and could make the semiconductor losing its photoelectrochemical properties. Addition of tartaric acid, citric acid and hydrofluoric acid into the solution improved the etching. The method of measuring the flatband potential of the interface between GaSb and electrolyte has also been investigated.

Key words: Semiconductor electrochemistry, Photoelectrochemistry of semiconduceor, Photomicroetching of GaSb, Interface properties of GaSb electrode