In2O3敏化ZnO纳米棒阵列的性能及其光电催化活性

doi:10.3866/PKU.WHXB201303043

Abstract

Abstract:

In₂O₃-sensitized ZnO nanorod array films were prepared in a two-step aqueous process on fluorine-doped tin oxide (FTO) substrates. Field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), field-induced surface photovoltage (FISPV), and UV-Vis diffuse reflectance spectroscopy (UV-Vis DRS) were used to characterize films. The influence of In₂O₃ content on the transfer characteristics of photoinduced charge carriers is discussed based on photovoltage response. The photoelectrocatalytic degradation efficiency of In₂O₃-sensitized ZnO nanorod array films was monitored using UV-Vis spectrometer. The photoelectrocatalytic activity of ZnO nanorod array and In₂O₃-sensitized ZnO nanorod array were evaluated from the degradation efficiency of rhodamine B (RhB). The effect of the In₂O₃-sensitized ZnO heterostructure on photoinduced electrons was investigated using the electrochemical workstation and the relationship between the photoinduced electron behavior and the photoelectrocatalytic process. Aqueous RhB was more efficiently degraded by the In₂O₃-sensitized ZnO nanorod array (visible light, applied bias voltage, 2 h), and the efficiency of the In₂O₃-sensitized array (95%) was 1.4 times higher than that of pure ZnO.

Key words: In₂O₃-sensitized ZnO, Nanorod array, Photocurrent density-potential, Photocurrent, On-off illumination, Surface photovoltage, Visible-light photoelectrocatalytic activity

YAN Wei-Ping, WANG De-Jun, CHEN Li-Ping, LU Yong-Chun, XIE Teng-Feng, LIN Yan-Hong. Properties and Photoelectrocatalytic Activity of In₂O₃-Sensitized ZnO Nanorod Array[J].Acta Phys. -Chim. Sin., 2013, 29(05): 1021-1027.

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Properties and Photoelectrocatalytic Activity of In₂O₃-Sensitized ZnO Nanorod Array

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Properties and Photoelectrocatalytic Activity of In₂O₃-Sensitized ZnO Nanorod Array