Se掺杂对单层MoS2电子能带结构和光吸收性质的影响
Effect of Se Doping on the Electronic Band Structure and Optical Absorption Properties of Single Layer MoS2
Se掺杂对单层MoS2电子能带结构和光吸收性质的影响 |
| 李刚,陈敏强,赵世雄,李朋伟,胡杰,桑胜波,侯静静 |
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Effect of Se Doping on the Electronic Band Structure and Optical Absorption Properties of Single Layer MoS2 |
| Gang LI,Min-Qiang CHEN,Shi-Xiong ZHAO,Peng-Wei LI,Jie HU,Sheng-Bo SANG,Jing-Jing HOU |
| 图5 Se掺杂与本征单层MoS2的价带顶(VBM)与导带底(CBM)的位置 |
| Fig 5 VBM and CBM of undoped and Se doped monolayer MoS2 The vacuum level is taken as zero reference. VBM: valence band maximum; CBM: conduction band minimum |
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