| Sample | Thermal conductivity (W·m-1·K-1) | Measurement method | Preparation method | | Suspended | | Single-layer graphene 6 | 5300 ± 480 | Raman | Mechanical exfoliation | | Single-layer graphene 17 | 2500 + 1100/-1050 | Raman | CVD | | 2-layer graphene 25 | 620 ± 80 | Suspended-pad | Mechanical exfoliation | | Single-layer graphene 26 | 1689 ± 100 | Suspended-pad | CVD | | Supported | | Single-layer graphene 8 | 579 ± 34 | Suspended-pad | Mechanical exfoliation, SiO2 substrate | | Single-layer graphene 16 | 630 | Raman | Mechanical exfoliation, SiO2 substrate | | Single-layer graphene 17 | 370 + 650/-320 | Raman | CVD, Au/SiNx substrate | | 3-layer graphene 24 | 327 | Suspended-pad | Mechanical exfoliation, SiNx substrate | | Bulk | | Multi-layer graphene 35 | 1930 ± 1400 | TDTR | Mechanical exfoliation, thickness 194 nm | | HOPG 38 | 1800 | TDTR | Bulk | | HOPG 39 | 1861 ± 744 | TDTR | Bulk | | HOPG 40 | 1843 | TDTR | Bulk | | Graphene film 48 | 1100 | Laser flash | Reduced graphene oxide | | Graphene film 10 | 1940 | Laser flash | Reduced graphene oxide |
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