物理化学学报 >> 1999, Vol. 15 >> Issue (04): 303-307.doi: 10.3866/PKU.WHXB19990404

研究论文 上一篇    下一篇

InP(110)理解面的能带弯曲

邓宗武, 郭伟民, 刘焕明, 曹立礼   

  1. 清华大学化学系，北京 100084|香港大学化学系;香港大学物理系
  • 收稿日期:1998-06-16 修回日期:1998-08-26 发布日期:1999-04-15
  • 通讯作者: 曹立礼

Band Bending of Cleaved InP(110) Surface

Deng Zong-Wu, Guo Wei-Min, Liu Huan-Ming, Cao Li-Li   

  1. Department of Chemistry,Tsinghua University,Beijing 100084;Department of Chemistry,The Chinese University of Hongkong|Department of Physics,The Chinese University of Hongkong
  • Received:1998-06-16 Revised:1998-08-26 Published:1999-04-15
  • Contact: Cao Li-Li

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摘要：

用XPS测得了真空解理后InP样品（110）表面能带弯曲的动态过程，并对引起InP表面能带弯曲的可能原因进行了讨论．排除了本征表面态、真空中残留气体和X射线辐射等原因，认为解理过程在表面产生的缺陷和解理后表面晶格弛豫产生的缺陷可能是导致能带弯曲的原因．

关键词: InP, 能带弯曲, 动态过程, XPS

Abstract:

The dynamic surface band bending of cleaved InP(110) sample was investegated using in situ XPS analysis and the causes of band bending was discussed according to the experimental results. It was concluded that there is no intrinsic surface states in InP and neither the residual gas in UHV nor the X-Ray radiation causes the band bending, the band bending should be caused by the surface defects induced during the cleavage and lattice relaxation.

Key words: InP, Band bending, Dynamic process, XPS