物理化学学报 >> 1993, Vol. 9 >> Issue (03): 386-391.doi: 10.3866/PKU.WHXB19930318

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n型砷化镓微区光电化学腐蚀过程

王卫江; 王江涛; 金承和; 陆寿蕴   

  1. 复旦大学化学系，上海 200433
  • 收稿日期:1992-01-08 修回日期:1992-08-30 发布日期:1993-06-15
  • 通讯作者:

Photoelectrochemical Microetching of n-GaAs

Wang Wei-Jiang; Wang Jiang-Tao; Jin Cheng-He; Lu Shou-Yun   

  1. Department of Chemistry, Fudan University, Shanghai 200433
  • Received:1992-01-08 Revised:1992-08-30 Published:1993-06-15
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摘要： 在n-GaAs电解液界面,用聚焦He-Ne激光照射, 使n-GaAs表面发生微区光电化学腐蚀, 用计算机控制步进马达, 使试样在X-Y二维方向扫描移动, 能在晶片上得到刻蚀点直径2 μm的刻蚀图案. 研究了激光相对光强, KOH、H_2SO_4、KCl等刻蚀剡的浓度, 光腐蚀的时间, 电极电位等因素对腐蚀点的直径和深度的影响, 通过实验数据找出腐蚀过程的规律, 并用光电化学原理进行解释.

关键词: 光电化学腐蚀, 半导体微刻蚀, 光助微刻蚀, n-GaAs无掩模刻蚀

Abstract: Microphotoelectrochemical etching of n-GaAs by focused He-Ne laser was inven-stigated. An etched pattern was scribed on the n-GaAs surface while the sample moved in X-Y two directions by means of two motors controlled by microcomputer. The diameter of the etched holes was 2 μm. The intensity of the laser light, the concen-trations of different etchants, such as KOH, _2SO_4, HCl and KCl etc., the etching time, the electrode potentials effected the diameters and depths of the etched holes. The experiment results were discussed and analyzed in this paper.

Key words: Photoelectrochemical etching, Microetching of semiconductor, Photoassisted microetching, Non-mask etch of n-GaAs