物理化学学报 >> 2005, Vol. 21 >> Issue (10): 1073-1075.doi: 10.3866/PKU.WHXB20051002

研究论文 上一篇    下一篇

Ag/TCNQ薄膜中的传质行为研究

刘平; 蒋益明; 郭峰; 谢亨博; 李劲   

  1. 复旦大学材料科学系, 上海 200433
  • 收稿日期:2005-01-04 修回日期:2005-03-24 发布日期:2005-10-15
  • 通讯作者: 李劲 E-mail:jinli@fudan.edu.cn

Studies on the Transport Behavior in Ag/TCNQ Thin Films

LIU Ping; JIANG Yi-ming; GUO Feng; XIE Heng-bo; LI Jin   

  1. Department of Materials Science, Fudan University, Shanghai 200433
  • Received:2005-01-04 Revised:2005-03-24 Published:2005-10-15
  • Contact: LI Jin E-mail:jinli@fudan.edu.cn

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摘要： 采用真空蒸发的方法在玻璃基板上交替蒸发Ag和TCNQ(四氰基对醌二甲烷), 形成不同厚度的双层膜, 经Ag的固体化学扩散与TCNQ反应, 形成金属有机络合物. 利用透射光谱作为表征, 研究了Ag的传质规律, 给出了60~110 ℃温度下的恒温传质系数k和对应的激活能, 并对传质机制进行了探讨.

关键词: Ag/TCNQ薄膜, 激活能, 传质系数

Abstract: Ag/TCNQ bi-layer films with different thicknesses were prepared on glass substrate by successive vacuum deposition of Ag and TCNQ. Ag-TCNQ complex was formed by the solid transport of Ag in the films. The transport behavior of Ag in the thin films was studied using optical transmittance spectra. The transport coefficients(k) were obtained and the activation energy was calculated between 60 and 110 ℃. The results show that the transport distance (x) and transport time (t) accord with parabola law (x2=2kt). The transport coefficient k and the activation energy Q could be expressed by k=k0exp(－Q/RT)=5.62×10－6 exp(－0.53/RT). And the diffusion mechanism was discussed, which was believed to be interstitialcy mechanism.

Key words: Ag/TCNQ thin films, Activation energy, Transport coefficient