新型锗硅基半导体二维原子晶体合成与带隙调控

doi:10.3866/PKU.WHXB202004059

物理化学学报 >> 2020, Vol. 36 >> Issue (11): 2004059.doi: 10.3866/PKU.WHXB202004059

新型锗硅基半导体二维原子晶体合成与带隙调控

谢毅()

中国科技大学化学与材料科学学院，合肥 230026

发布日期:2020-04-23

Synthesis and Bandgap Tuning of Novel Germanium and Silicon based Semiconductor Two-Dimensional Atomic Crystals

Yi Xie()

School of Chemistry and Materials Science, University of Science and Technology of China, Hefei 230026, P. R. China

Published:2020-04-23
About author:Yi Xie, Email: yxie@ustc.edu.cn

摘要/Abstract

谢毅. 新型锗硅基半导体二维原子晶体合成与带隙调控[J]. 物理化学学报, 2020, 36(11): 2004059.

Yi Xie. Synthesis and Bandgap Tuning of Novel Germanium and Silicon based Semiconductor Two-Dimensional Atomic Crystals[J]. Acta Physico-Chimica Sinica, 2020, 36(11): 2004059.

链接本文: https://www.whxb.pku.edu.cn/CN/10.3866/PKU.WHXB202004059

https://www.whxb.pku.edu.cn/CN/Y2020/V36/I11/2004059

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参考文献 7

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新型锗硅基半导体二维原子晶体合成与带隙调控

Synthesis and Bandgap Tuning of Novel Germanium and Silicon based Semiconductor Two-Dimensional Atomic Crystals

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