预沉积Ge对Si(111)衬底上SSMBE外延生长SiC薄膜的影响
刘忠良;任鹏;刘金锋;唐军;徐彭寿
Effect of Predeposited Ge on the Growth of SiC Films on Si(111) by SSMBE
LIU Zhong-Liang; REN Peng; LIU Jin-Feng; TANG Jun; XU Peng-Shou
物理化学学报
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2008, (07): 1160
-1164
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DOI: 10.3866/PKU.WHXB20080707
