具有SiC缓冲层的Si衬底上直接沉积碳原子生长石墨烯
唐军, 康朝阳, 李利民, 徐彭寿
Direct Graphene Growth by Depositing Carbon Atoms on Si Substrate Covered by SiC Buffer Layers
TANG Jun, KANG Chao-Yang, LI Li-Min, XU Peng-Shou
物理化学学报
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2011, (12): 2953
-2959
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DOI: 10.3866/PKU.WHXB20112953
