Abstract: Microphotoelectrochemical etching of n-GaAs by focused He-Ne laser was inven-stigated. An etched pattern was scribed on the n-GaAs surface while the sample moved in X-Y two directions by means of two motors controlled by microcomputer. The diameter of the etched holes was 2 μm. The intensity of the laser light, the concen-trations of different etchants, such as KOH, _2SO_4, HCl and KCl etc., the etching time, the electrode potentials effected the diameters and depths of the etched holes. The experiment results were discussed and analyzed in this paper.

Key words: Photoelectrochemical etching, Microetching of semiconductor, Photoassisted microetching, Non-mask etch of n-GaAs