Acta Phys. -Chim. Sin. ›› 2010, Vol. 26 ›› Issue (06): 1617-1622.doi: 10.3866/PKU.WHXB20100635

• PHOTOCHEMISTRY AND SPECTROSCOPY • Previous Articles     Next Articles

Light Induced Interfacial Electron Transfer in Rup2P Surface-Sensitized TiO2-Based Films

ZHAI Xiao-Hui, ZHAO Jun-Yan, CHAO Hui, CAO Ya-An   

  1. College of Physics, Nankai University, Tianjin 300071, P. R. China; Teda Applied Physics School, Nankai University, Tianjin 300457, P. R. China; School of Chemical and Chemistry Engineering, Sun Yat-Sen University, Guangzhou 510275, P. R. China
  • Received:2009-12-30 Revised:2010-03-25 Published:2010-05-28
  • Contact: CAO Ya-An


TiO2/ITO, TiO2-Zn/ITO and TiO2/ZnO/ITO films were prepared by ion-beamsputtering, and then further surface-sensitized with the Ru(phen)2(PIBH) complex (Rup2P) of Rup2P/TiO2/ITO, Rup2P/TiO2-Zn/ITO, and Rup2P/TiO2/ZnO/ITOby the spin-coating method. Surface photovoltage spectra (SPS) of the films revealed that SPS responses were present at 400-600 nm after surface-sensitization and the SPS intensity ratios between the peaks at 400-600 nm and 350 nm were different because of the different energy band structures in the TiO2-based films. The physical parameters and energy band structures of TiO2-based and Rup2P modified TiO2-based films were determined by electric field induced surface photovoltage spectroscopy (EFISPS). We found that the 400-600 nm SPS peaks of the Rup2P modified films came from the Ru 4d to phen π*1 and PIBH π*2 electron transitions. The Zn2+ doping level in TiO2-Zn benefits the injection of photogenerated electrons from the ligand levels to the conduction band. The TiO2/ZnO heterostructure favors electron transfer to the surface of ITO, which can enhance the SPS response in the visible light region (400-600 nm) as well as the photoelectron transformation efficiency.

Key words: Rup2P, Surface-sensitization, TiO2-Zn/ITO, TiO2/ZnO/ITO, Light induced interfacial electron transfer