Acta Phys. -Chim. Sin. ›› 2007, Vol. 23 ›› Issue (08): 1252-1256.doi: 10.3866/PKU.WHXB20070821

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Effect of Substrate Temperature on the Optical Properties of a-Si:H Films by RF-PECVD

LI Shi-Bin; WU Zhi-Ming; ZHU Kui-Peng; JIANG Ya-Dong; LI Wei; LIAO Nai-Man   

  1. School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China
  • Received:2007-01-18 Revised:2007-04-24 Published:2007-08-03
  • Contact: WU Zhi-Ming E-mail:zmwu@uest.edu.cn

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Abstract: Hydrogenated amorphous silicon films were grown by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) and the substrate temperature of samples changed in the range of 175-275 ℃. Fourier-transform infrared spectrometer (FTIR) was used to characterize the infrared spectral feature of films deposited on KBr substrate. The hydrogen content of films was influenced by substrate temperature according to the FTIR spectra and theoretic analysis. The refractive index (n), extinction coefficient (k), thickness of films and optical band gap (Eg(FB)) were obtained through Forouhi Bloomer (FB) model in spectrum ellipsomet (SE). Appearance of fracture was analyzed by scanning electron microscopy (SEM) to make sure the result of filmthickness. The optical band gap (Eg(Tauc)) and cutoff wavelength were also deduced by Tauc formula, and the difference between Eg(FB) and Eg(Tauc) was within 0.015 eV.

Key words: Amorphous silicon, Optical constant, Optical band gap, FTIR, Thin film