Acta Phys. -Chim. Sin. ›› 2011, Vol. 27 ›› Issue (12): 2831-2835.doi: 10.3866/PKU.WHXB20112831

• ELECTROCHEMISTRY AND NEW ENERGY • Previous Articles     Next Articles

Photoelectrochemical Properties of Graphene Oxide Thin Film Electrodes

ZHANG Xiao-Yan, SUN Ming-Xuan, SUN Yu-Jun, LI Jing, SONG Peng, SUN Tong, CUI Xiao-Li   

  1. Department of Materials Science, Fudan University, Shanghai 200433, P. R. China
  • Received:2011-06-09 Revised:2011-09-05 Published:2011-11-25
  • Contact: CUI Xiao-Li
  • Supported by:

    The project was supported by the National Key Basic Research Program of China (973) (2011CB933302, 2010CB933703), Shanghai Science and Technology Commission, China (1052nm01800), and Key Disciplines Innovative Personnel Training Plan of Fudan University, China.

Abstract: A series of graphene oxide (GO) thin films were prepared by a dip-coating method and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier-transform infrared (FTIR) spectroscopy, ultraviolet-visible (UV-Vis) light absorption, and photoelectrochemical measurements. A cathodic photocurrent was observed for the GO electrodes and the photocurrent density was influenced by the thickness of the films. The GO film electrode with an average thickness of 27 nm gave a photocurrent density of 0.25 μA·cm-2. The photoresponse of the GO electrodes was found to be influenced by UV irradiation and the cathodic photocurrent decreased gradually with UV irradiation time. This work provides a simple method to change the photoelectrochemical property of GO films by controlling the film thickness or UV irradiation time.

Key words: Graphene oxide, Photoelectrochemical property, Cathodic photocurrent, Film thickness, UV irradiation