Acta Phys. -Chim. Sin. ›› 2001, Vol. 17 ›› Issue (01): 53-58.doi: 10.3866/PKU.WHXB20010111

• ARTICLE • Previous Articles     Next Articles

Structure and Luminescence Properties of Tb-doped Sibased Light-emitting

Wu Hong-Ying;Wang Xi-Gui;Xie Da-Tao;Weng Shi-Fu;Wu Jin-Guang   

  1. Department of Chemistry,Inner Mongolia Normal University,Huhehot 010022;College of Chemistry and Molecular Engineering,Peking University,State Key Laboratory of Rare Earth Materials Chemistry and Application,Beijing 100871
  • Received:2000-06-07 Revised:2000-09-10 Published:2001-01-15
  • Contact: Wu Jin-Guang

Abstract: Tb3+ ions were incorporated in SiO2 glasses using a solgel process with appropriate heat treatment.Glasses incorporated with Tb3+ showed emission peaks at 488,544,585,and 620 nm,respectively,exhibiting,respectively,5D4—7FJ(J=3,4,5,6) transition of the Tb3+ ions.The structural evolution during the transition from gel to glass of Tb3+ doped SiO2 glasses and the effect on luminescence properties were studied by excitation spectra,emission spectra,IR,farIR and DTATG at differential heat treatment conditions.The results show that most of absorbed water molecules in gel were removed during heat treatment at 50~100 ℃,conversion from gel to glasses was the main structural changes when gel was heattreated in the range 150~500 ℃,and the luminescence intensity increased remarkably also,becoming stable structure at 800 ℃.This observation leads to a conclusion that the radiation electronic transitions of Tb3+ were quenched strongly by O-H group and were enhanced by temperature elevation.

Key words: Sol-gel method, Tb-doped silica glasses, Luminescence properties