Acta Phys. -Chim. Sin. ›› 2006, Vol. 22 ›› Issue (06): 657-660.doi: 10.3866/PKU.WHXB20060603

• ARTICLE • Previous Articles     Next Articles

Structure and Synthesis of GaN Powder by Sol-Gel Method

LIU Yi-An;XUE Cheng-Shan;ZHUANG Hui-Zhao;ZHANG Xiao-Kai;TIAN De-Heng;WU Yu-Xin;SUN Li-Li;AI Yu-Jie;WANG Fu-Xue   

  1. Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, Jinan 250014, P. R. China
  • Received:2005-11-07 Revised:2006-01-13 Published:2006-05-31
  • Contact: XUE Cheng-Shan E-mail:xuechengshan@sdnu.edu.cn

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Abstract: A novel and efficient method was applied to prepare gallium nitride (GaN) powder. Hexagonal gallium nitride (GaN) powder was successfully synthesized by means of a combination of sol-gel process with high temperature ammoniation using Ga(OC2H5)3 as a precursor. Ammoniation of Ga2O3 gel was conducted in the flow of NH3 gas at 950 ℃ for 20 min. Measurement results by XRD, FTIR, TEM, and SAED indicate that the synthesised GaN is of a single-phase hexagonal wurtzite structure, and the granularity of the GaN powder has a good uniformity. In addtion, the FTIR shows a distinct peak broadening.

Key words: Sol-gel method, Ammonition temperature, GaN powder