总气压与Ar/O2流量比对直流对向靶磁控溅射TiO2薄膜光催化性能的影响

doi:10.3866/PKU.WHXB201207061

Abstract

Abstract:

Polycrystalline TiO₂ thin films were prepared by direct current facing-target magnetron sputtering at different sputtering pressures and Ar/O₂ flow ratios. The average thickness of all prepared films was 200 nm, measured by surface roughness tester. With increase in sputtering pressure (p_tot), the prepared films changed from mixtures of anatase and rutile phases to pure anatase. The influences of different sputtering pressures and Ar/O₂ flow ratios on surface morphology of prepared films were investigated by field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). The film surface was found to become rougher with increasing pressure and Ar/O₂ flow ratios. Photocatalytic activities of the prepared TiO₂ thin films were investigated by decomposition of iso-propanol (IPA) with initial concentration of 100×10^-6 (volume fraction) under UV irradiation. The IPA was oxidized to acetone and further to carbon dioxide. TiO₂ thin film deposited at 2.0 Pa with an Ar/O₂ flow ratio of 1:1 showed the highest photocatalytic activity and maintained a high stability constant during the reaction.

Key words: TiO₂ thin film, Facing-target magnetron sputtering, Total pressure, Ar/O₂ flow ratio, iso-Propanol degradation, Superhydrophilicity

CHEN Peng, TAN Xin, YU Tao. Effects of Total Pressure and Ar/O₂ Flow Ratios on Photocatalytic Properties of TiO₂ Thin Films Deposited by Direct Current Facing-Target Magnetron Sputtering[J]. Acta Phys. -Chim. Sin. 2012, 28(09), 2162-2168. doi: 10.3866/PKU.WHXB201207061

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Effects of Total Pressure and Ar/O₂ Flow Ratios on Photocatalytic Properties of TiO₂ Thin Films Deposited by Direct Current Facing-Target Magnetron Sputtering

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Effects of Total Pressure and Ar/O2 Flow Ratios on Photocatalytic Properties of TiO2 Thin Films Deposited by Direct Current Facing-Target Magnetron Sputtering

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Effects of Total Pressure and Ar/O₂ Flow Ratios on Photocatalytic Properties of TiO₂ Thin Films Deposited by Direct Current Facing-Target Magnetron Sputtering