氢终止金刚石表面的形成机理

doi:10.3866/PKU.WHXB201508031

Abstract

Abstract:

Microwave hydrogen plasma was used to introduce hydrogen termination on the diamond surface. Optical emission spectroscopy (OES) and diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS) were used to characterize the active radicals in the plasma and the concentration of H-termination on the diamond surface, respectively. Thermal hydrogenation treatment carried out by hot filament heat in a hydrogen atmosphere was also proposed for incorporation of H-termination on the diamond surface. The results showed that the CH radical content in the microwave plasma and the H-termination concentration on the diamond surface after microwave plasma treatment were both facilitated by increasing the substrate temperature, plasma density, and input power. Interestingly, thermal hydrogenation treatment can produce Htermination on the diamond surface compared with to a similar extent to microwave plasma treatment. These observations show that the crucial factor for forming the H-terminated diamond surface is the surface chemical reaction controlled by temperature, rather than the plasma etching effect. When the temperature is above 500 ℃, C=O bonds on the O-terminated diamond surface decompose to CO and leave dangling bonds, which then connect with atomic or molecular hydrogen.

Key words: Microwave hydrogen plasma, Diamond, H-termination, O-termination

Jin-Long. LIU,Sheng. LIU,Jian-Chao. GUO,Chen-Yi. HUA,Liang-Xian. CHEN,Jun-Jun. WEI,Li-Fu. HEI,Jing-Jing. WANG,Zhi-Hong. FENG,Qing. LIU,Cheng-Ming. LI. Formation Mechanism of the H-terminated Diamond Surface[J]. Acta Phys. -Chim. Sin. 2015, 31(9), 1741-1746. doi: 10.3866/PKU.WHXB201508031

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Formation Mechanism of the H-terminated Diamond Surface

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