Acta Phys. -Chim. Sin.

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A high-entropy strategy for customizing electromagnetic absorption spectra: from GHz to THz broadband absorbers

Yu Wang1, Wenxuan Wang2, Lin Chu3, Mo Chen2,3, Yaru Qiu3, Yaqian Zhang4, Dejun Liu4, Di Lan5, Dong Liu2, Baoguo Zhang2   

  1. 1 College of Pharmacy, North Henan Medical University, Xinxiang 453003, Henan Province, China;
    2 School of Chemistry and Chemical Engineering, Shandong University of Technology, Zibo 255049, Shandong Province, China;
    3 Department of Pharmacy and Laboratory Medicine, Heze Medical College, Heze 274000, Shandong Province, China;
    4 Shanghai Key Laboratory for Submillimeter Astrophysics, Shanghai Normal University, Shanghai 200234, China;
    5 School of Automotive Materials, Hubei University of Automotive Technology, Shiyan 442002, Hubei Province, China
  • Received:2026-06-27 Revised:2026-09-03 Accepted:2026-09-12
  • Contact: Yaru Qiu, Dong Liu, Baoguo Zhang E-mail:qiuyaru1@163.com;liu_dong@sdut.edu.cn;zbg_23@163.com

Abstract: The rapid advancement of 5G communications, radar, and terahertz (THz) technologies has spurred an urgent demand for electromagnetic (EM) wave absorbing materials with high absorption efficiency and superior stability. MXenes have attracted significant attention due to their excellent conductivity and tunable dielectric properties. However, conventional MXenes are limited to single or dual transition metal compositions, restricting their functional diversity. Herein, we reported two kinds of quaternary high-entropy MXenes (TiVCrMoC3Tx and TiVNbMoC3Tx) along with their corresponding MAX phase precursors. Monolayer high-entropy MXene nanosheets were successfully synthesized via combined acid etching and intercalation exfoliation, and their EM absorption performance was systematically investigated across GHz-THz bands. Theoretical calculation coupled with terahertz spectroscopy reveal that strategic Cr/Nb alloying selectively reconstructs electronic states at the Fermi level, achieving tunable EM absorption characteristics. Remarkably, TiVCrMoC3Tx achieved remarkable reflection loss (RL) of -60.2 dB at 1.50 mm thickness with an effective absorption bandwidth (EAB) of 4.00 GHz due to enhanced dielectric loss, while TiVNbMoC3C3Tx exhibits an RL of -44.26 dB at 2.50 mm and an EAB of 5.61 GHz at 2.00 mm. Both materials demonstrate near-ideal THz-band absorption and low reflectivity. This study not only expands the frontiers of high-entropy materials for EM absorption but also establishes fundamental principles for EM shielding, interference suppression, and stealth applications.

Key words: Electromagnetic wave absorbing, Terahertz technology, High-entropy MXenes, Dielectric loss