物理化学学报 >> 1997, Vol. 13 >> Issue (11): 1052-1056.doi: 10.3866/PKU.WHXB19971119

综述 上一篇    

纳米半导体及其应用

李玉铭,李山东,林鸿溢   

  1. 哈尔滨理工大学，哈尔滨 150080|北京理工大学电子工程系，北京 100081
  • 收稿日期:1997-02-18 修回日期:1997-06-06 发布日期:1997-11-15
  • 通讯作者: 林鸿溢

Nanometer Semiconductor Films and It's Application

Li Yu-Ming,Li Shan-Dong,Lin Hong-Yi   

  1. Haerbin University of Technology,Haerbin 150080|Beijing Institute Technology,Beijing 100081
  • Received:1997-02-18 Revised:1997-06-06 Published:1997-11-15
  • Contact: Lin Hong-Yi

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摘要：

纳米半导体硅（nc-Si:H）薄膜是利用等离子体增强化学气相淀积（PECVD）方法制备的，制备条件可以很好地进行调节控制. 纳米硅薄膜由两种组元组成：纳米尺度晶粒组元和晶粒间的界面组元，即晶态相和晶界相组成. 这对发展半导体器件，例如量子功能器件和薄膜敏感器件等是特别有价值的.

关键词: 半导体材料, 纳米半导体, 量子功能器件

Abstract:

Hydrogenated nano-crystalline silicon (nc-Si:H) films have been prepared by plasma enhanced chemical vapor deposition (PECVD) method under rigorously controlled conditions of deposition. The nc-Si:H films consist of a mass of nanometer scale grains and an interfacial region, i.e. the crystalline phase and the grain boundary phase. It is especially valuable for use in some devices, for example, quantum function devices and film sensors etc.

Key words: Semiconductor materials, N ano-crystalline semiconductor, Quantum function devices