物理化学学报 >> 2002, Vol. 18 >> Issue (11): 973-978.doi: 10.3866/PKU.WHXB20021103

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高择优取向铜镀层的电化学形成及其表面形貌

辜敏;杨防祖;黄令;姚士冰;周绍民   

  1. 汕头大学化学系,汕头　515063；厦门大学化学系,固体表面物理化学国家重点实验室,物理化学研究所, 厦门　361005
  • 收稿日期:2002-02-18 修回日期:2002-04-05 发布日期:2002-11-15
  • 通讯作者: 周绍民 E-mail:smzhou@xmu.edu.cn

The Formation of Copper Electrodeposits with Highly Preferred Orientation and Their Surface Morphology

Gu Min;Yang Fang-Zu;Huang Ling;Yao Shi-Bing;Zhou Shao-Min   

  1. Department of Chemistry , Shantou Universitry, Shantou　515063;Department of Chemistry, State Key Laboratory for Physical Chemistry of Solid Surfaces, Institute of Physical Chemistry, Xiamen University, Xiamen　361005
  • Received:2002-02-18 Revised:2002-04-05 Published:2002-11-15
  • Contact: Zhou Shao-Min E-mail:smzhou@xmu.edu.cn

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摘要： 采用电化学方法在H2SO4-CuSO4电解液中获得高择优取向的Cu电沉积层.XRD结果表明,在1.0 ～6.0和15.0 A•dm－2的电流密度下可分别获得(220)和(111)晶面高择优取向的Cu镀层.在同一电流密度下获得的Cu电沉积层织构度随镀层厚度增大而提高.SEM结果表明,在4.0和15.0 A•dm－2的电流密度下可分别获得(220)和(111)织构Cu沉积层,其表面形貌在(220)晶面取向时呈现为细长晶粒连结成的网状，在(111)取向时则呈六棱锥状.提出了可能的机理，认为电流密度变化引起的Cu镀层择优取向晶面的转化归因于电结晶晶面生长方向及生长速度竞争的结果.

关键词: 电沉积, Cu镀层, 高择优取向, 表面形貌

Abstract: Cu electrodeposits with highly preferred orientations were obtained from H2SO4-CuSO4 electrolytic solution. XRD results indicated that at current densities 1.0～6.0 A•dm－2 and 15.0 A•dm－2,the obtained Cu electrodeposits were respectively shown in (220) and (111) highly preferred orientations. The value of texture coefficient of Cu electrodeposited at a stationary current density was increased with its thickness. SEM results revealed that the surface morphology of the electrodeposits with (220) texture obtained at 4.0 A•dm－2 appeared in network combined with needle crystals, and texture with (111) at 15.0 A•dm－2 in hexagonal pyramid. The changes of the preferred orientation effected by current density were mainly attributed to the competitions between the grains growing direction and the rate during Cu electro crystallization.

Key words: Electrodeposition, Copper electrodeposit, Highly preferred orientation, Surface morphology