物理化学学报 >> 2010, Vol. 26 >> Issue (06): 1617-1622.doi: 10.3866/PKU.WHXB20100635

光化学与光谱 上一篇    下一篇

Rup2P表面敏化TiO2基复合薄膜光致界面电荷转移

翟晓辉, 赵俊岩, 巢晖, 曹亚安   

  1. 南开大学物理学院, 天津 300071; 南开大学泰达应用物理学院, 天津 300457; 中山大学化学与化学工程学院, 广州 510275
  • 收稿日期:2009-12-30 修回日期:2010-03-25 发布日期:2010-05-28
  • 通讯作者: 曹亚安 E-mail:caoyaan@yahoo.com

Light Induced Interfacial Electron Transfer in Rup2P Surface-Sensitized TiO2-Based Films

ZHAI Xiao-Hui, ZHAO Jun-Yan, CHAO Hui, CAO Ya-An   

  1. College of Physics, Nankai University, Tianjin 300071, P. R. China; Teda Applied Physics School, Nankai University, Tianjin 300457, P. R. China; School of Chemical and Chemistry Engineering, Sun Yat-Sen University, Guangzhou 510275, P. R. China
  • Received:2009-12-30 Revised:2010-03-25 Published:2010-05-28
  • Contact: CAO Ya-An E-mail:caoyaan@yahoo.com

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摘要：

采用离子束溅射技术制备出TiO2/ITO、Zn2+掺杂的TiO2(TiO2-Zn)/ITO和TiO2/ZnO/ITO薄膜, 采用表面敏化技术和旋转涂膜法, 制备出(1,10-邻菲咯啉)2-2-(2-吡啶基)苯咪唑钌混配配合物(Rup2P)表面敏化的TiO2基复合薄膜Rup2P/TiO2/ITO、Rup2P/TiO2-Zn/ITO和Rup2P/TiO2/ZnO/ITO. 表面光电压谱(SPS)结果发现: 敏化后的TiO2基薄膜在可见区(400-600 nm)产生SPS响应; TiO2基薄膜的能带结构不同, 其在400-600 nm和350 nm处的SPS响应的峰高比不同. 利用电场诱导表面光电压谱(EFISPS), 测定TiO2基薄膜和表面敏化TiO2基复合薄膜各种物理参数,并确定其能带结构. 分析可知, 表面敏化TiO2基复合薄膜在400-600 nm的SPS响应峰主要源于Rup2P分子的中心离子Ru 4d能级到配体1,10-邻菲咯啉π*1和2-(2-吡啶基)苯咪唑π*2能级的跃迁; TiO2中Zn2+掺杂能级有利于Ru 4d能级到配体π*1和π*2跃迁的光生电子向TiO2-Zn导带的注入; TiO2/ZnO异质结构有利于光生电子向ITO 表面的转移, 从而导致可见光(400-600 nm) SPS响应增强以及光电转换效率的提高.

关键词: Rup2P, 表面敏化, TiO2-Zn/ITO, TiO2/ZnO/ITO, 光致界面电荷转移

Abstract:

TiO2/ITO, TiO2-Zn/ITO and TiO2/ZnO/ITO films were prepared by ion-beamsputtering, and then further surface-sensitized with the Ru(phen)2(PIBH) complex (Rup2P) of Rup2P/TiO2/ITO, Rup2P/TiO2-Zn/ITO, and Rup2P/TiO2/ZnO/ITOby the spin-coating method. Surface photovoltage spectra (SPS) of the films revealed that SPS responses were present at 400-600 nm after surface-sensitization and the SPS intensity ratios between the peaks at 400-600 nm and 350 nm were different because of the different energy band structures in the TiO2-based films. The physical parameters and energy band structures of TiO2-based and Rup2P modified TiO2-based films were determined by electric field induced surface photovoltage spectroscopy (EFISPS). We found that the 400-600 nm SPS peaks of the Rup2P modified films came from the Ru 4d to phen π*1 and PIBH π*2 electron transitions. The Zn2+ doping level in TiO2-Zn benefits the injection of photogenerated electrons from the ligand levels to the conduction band. The TiO2/ZnO heterostructure favors electron transfer to the surface of ITO, which can enhance the SPS response in the visible light region (400-600 nm) as well as the photoelectron transformation efficiency.

Key words: Rup2P, Surface-sensitization, TiO2-Zn/ITO, TiO2/ZnO/ITO, Light induced interfacial electron transfer