BiVO4膜电极的制备及其光电化学性能

doi:10.3866/PKU.WHXB20110913

物理化学学报 >> 2011, Vol. 27 >> Issue (09): 2160-2166.doi: 10.3866/PKU.WHXB20110913

BiVO₄膜电极的制备及其光电化学性能

彭天右, 柯丁宁, 曾鹏, 张晓虎, 范科

武汉大学化学与分子科学学院, 武汉 430072

收稿日期:2011-04-06 修回日期:2011-06-05 发布日期:2011-08-26
通讯作者: 彭天右 E-mail:typeng@whu.edu.cn
基金资助:
国家自然科学基金(20871096, 20973128), 教育部新世纪优秀人才计划(NCET-07-0637)及高校基本科研业务基金(2081003)资助

Preparation and Photoelectrochemical Performance of BiVO₄ Film Electrode

PENG Tian-You, KE Ding-Ning, ZENG Peng, ZHANG Xiao-Hu, FAN Ke

College of Chemistry and Molecular Science, Wuhan University, Wuhan 430072, P. R. China

Received:2011-04-06 Revised:2011-06-05 Published:2011-08-26
Contact: PENG Tian-You E-mail:typeng@whu.edu.cn
Supported by:
The project was supported by the National Natural Science Foundation of China (20871096, 20973128), Program for New Century Excellent Talents in University, China (NCET-07-0637), and Fundamental Research Funds for the Central Universities of China (2081003).

摘要/Abstract

摘要： 以自制的BiVO₄纳米粉制备膜电极, 采用电化学方法较系统地研究了退火温度和膜厚对BiVO₄膜电极的光电化学行为和电子输运与复合的影响. 结果表明: 退火温度和膜厚对BiVO₄膜电极的光电特性有显著的影响. 膜厚为6.75 μm时, BiVO₄膜电极具有最佳的光电化学特性. 退火温度低于500 °C时, 膜电极的光电活性随着温度的升高而增强, 至500 °C时达到最大值; 此后膜电极内的体相缺陷明显增加, 导致其光电活性逐渐降低. BiVO₄膜电极有良好的可见光光电转换效率, 并利用其单色光转换效率曲线计算得到BiVO₄的带隙为2.36eV, 采用莫特-肖特基电化学法测得其平带电位为-0.7 V (vs Ag/AgCl). 上述结果为BiVO₄光催化体系的优化提供了重要的参考.

关键词: BiVO₄膜电极, 光电化学性能, 瞬态光电流谱, 平带电位

Abstract: A BiVO₄ film electrode was prepared using a home-made BiVO₄ nanopowder and the effects of annealing temperature and film thickness on its photoelectrochemical behavior, electron transport and recombination in the BiVO₄ electrode were systematically studied by electrochemical techniques. Experimental results indicate that the annealing temperature and film thickness can significantly influence the photoelectrochemical characteristics of the BiVO₄ electrode. At low annealing temperature (≤500 °C) the photoelectrochemical activity improved upon increasing the temperature and the optimal activity was obtained for the electrode annealed at 500 ° C. At high temperature (>500 ° C) the photoelectrochemical activity decreased because of a marked increase of bulk traps in the electrode. The BiVO₄ electrode showed good photon-to-electron conversion efficiency under visible light and its bandgap was found to be 2.36 eV based on an incident monochromatic photon-to-electric conversion efficiency curve. The flat-band potential (E_fb) of BiVO₄ was determined to be -0.7 V (vs Ag/AgCl) by the Mött Schottky method. These results give an important reference for the optimization of the BiVO₄ photocatalytic system.

Key words: BiVO₄ film electrode, Photoelectrochemical performance, Transient photocurrent spectrum, Flat-band potential

彭天右, 柯丁宁, 曾鹏, 张晓虎, 范科. BiVO₄膜电极的制备及其光电化学性能[J]. 物理化学学报, 2011, 27(09), 2160-2166. doi: 10.3866/PKU.WHXB20110913

PENG Tian-You, KE Ding-Ning, ZENG Peng, ZHANG Xiao-Hu, FAN Ke. Preparation and Photoelectrochemical Performance of BiVO₄ Film Electrode[J]. Acta Phys. -Chim. Sin. 2011, 27(09), 2160-2166. doi: 10.3866/PKU.WHXB20110913

链接本文: https://www.whxb.pku.edu.cn/CN/10.3866/PKU.WHXB20110913

https://www.whxb.pku.edu.cn/CN/Y2011/V27/I09/2160

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BiVO₄膜电极的制备及其光电化学性能

Preparation and Photoelectrochemical Performance of BiVO₄ Film Electrode

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