石墨烯氧化物薄膜电极的光电化学特性

doi:10.3866/PKU.WHXB20112831

物理化学学报 >> 2011, Vol. 27 >> Issue (12): 2831-2835.doi: 10.3866/PKU.WHXB20112831

石墨烯氧化物薄膜电极的光电化学特性

张晓艳, 孙明轩, 孙钰珺, 李靖, 宋鹏, 孙通, 崔晓莉

复旦大学材料科学系, 上海 200433

收稿日期:2011-06-09 修回日期:2011-09-05 发布日期:2011-11-25
通讯作者: 崔晓莉 E-mail:xiaolicui@fudan.edu.cn
基金资助:
国家重点基础研究发展规划项目(973) (2011CB933302, 2010CB933703), 上海市科学技术委员会纳米项目(1052nm01800)及复旦大学研究生创新基金资助

Photoelectrochemical Properties of Graphene Oxide Thin Film Electrodes

ZHANG Xiao-Yan, SUN Ming-Xuan, SUN Yu-Jun, LI Jing, SONG Peng, SUN Tong, CUI Xiao-Li

Department of Materials Science, Fudan University, Shanghai 200433, P. R. China

Received:2011-06-09 Revised:2011-09-05 Published:2011-11-25
Contact: CUI Xiao-Li E-mail:xiaolicui@fudan.edu.cn
Supported by:
The project was supported by the National Key Basic Research Program of China (973) (2011CB933302, 2010CB933703), Shanghai Science and Technology Commission, China (1052nm01800), and Key Disciplines Innovative Personnel Training Plan of Fudan University, China.

摘要/Abstract

摘要： 采用浸渍-提拉法制备了一系列石墨烯氧化物(GO)薄膜, 并通过X射线衍射(XRD), 扫描电镜(SEM), 傅里叶变换红外光谱, 紫外-可见吸收光谱和光电化学测量等技术对样品进行了表征. 在GO电极上观察到阴极光电流, 且光电流密度受薄膜的厚度影响. GO薄膜电极厚度为27 nm时, 光电流密度为0.25 μA·cm^-2. 此外, GO电极的光电响应还受紫外光照影响, 随着紫外光照时间的延长, 阴极光电流逐渐减小. 该工作提供了简便的通过控制薄膜厚度或紫外光照时间来控制GO薄膜半导体光电化学性能的方法.

关键词: 石墨烯氧化物, 光电化学性能, 阴极光电流, 膜厚, 紫外光照

Abstract: A series of graphene oxide (GO) thin films were prepared by a dip-coating method and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier-transform infrared (FTIR) spectroscopy, ultraviolet-visible (UV-Vis) light absorption, and photoelectrochemical measurements. A cathodic photocurrent was observed for the GO electrodes and the photocurrent density was influenced by the thickness of the films. The GO film electrode with an average thickness of 27 nm gave a photocurrent density of 0.25 μA·cm^-2. The photoresponse of the GO electrodes was found to be influenced by UV irradiation and the cathodic photocurrent decreased gradually with UV irradiation time. This work provides a simple method to change the photoelectrochemical property of GO films by controlling the film thickness or UV irradiation time.

Key words: Graphene oxide, Photoelectrochemical property, Cathodic photocurrent, Film thickness, UV irradiation

张晓艳, 孙明轩, 孙钰珺, 李靖, 宋鹏, 孙通, 崔晓莉. 石墨烯氧化物薄膜电极的光电化学特性[J]. 物理化学学报, 2011, 27(12), 2831-2835. doi: 10.3866/PKU.WHXB20112831

ZHANG Xiao-Yan, SUN Ming-Xuan, SUN Yu-Jun, LI Jing, SONG Peng, SUN Tong, CUI Xiao-Li. Photoelectrochemical Properties of Graphene Oxide Thin Film Electrodes[J]. Acta Phys. -Chim. Sin. 2011, 27(12), 2831-2835. doi: 10.3866/PKU.WHXB20112831

链接本文: https://www.whxb.pku.edu.cn/CN/10.3866/PKU.WHXB20112831

https://www.whxb.pku.edu.cn/CN/Y2011/V27/I12/2831

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石墨烯氧化物薄膜电极的光电化学特性

Photoelectrochemical Properties of Graphene Oxide Thin Film Electrodes

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