Acta Phys. -Chim. Sin. ›› 1994, Vol. 10 ›› Issue (08): 737-740.doi: 10.3866/PKU.WHXB19940814

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The Influence of Chmical Oxidation on Surface State and Photoluminescence of Porous Silicon

Li Jing-Jian, Diao Peng, Cai Sheng-Min, Hou Yong-Tian, Wang Xin, Zhang Shu-Lin   

  1. Department of Chemistry,Peking University,Beijing 100871|Department of Physics,Peking University,Beijing 100871
  • Received:1993-04-08 Revised:1993-08-30 Published:1994-08-15
  • Contact: Cai Sheng-Min

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Abstract:

The changes in photoluminescence and FTIR spectra of porous silicon subjected to oxidation were examined. With the increase of oxidizing duration, the relative amount of the Si-H2 surface species on PS decreases even though the photoluminescence intensity increases. the result suggests that it isn't SiH2 but Si-O and Si-O-Si on the interface of PS play a key role in enhancing the photoluminescence. A complete photoluminescence mechanism should consider the influence of surface state of porous silicon based on the quantum confinement effect model.

Key words: Porous silicon, Fourier transformed infrared transmission spectra, Photoluminescence, Photoluminescence mechanism