Acta Phys. -Chim. Sin. ›› 2010, Vol. 26 ›› Issue (04): 1164-1170.doi: 10.3866/PKU.WHXB20100425

• PHYSICAL CHEMISTRY OF MATERIALS • Previous Articles     Next Articles

Synthesis and Characterization of a Polyquinoline Derivative Thin Film with a Low Dielectric Constant

ZHAO Xiong-Yan   

  1. College of Material Science and Engineering, Hebei University of Science and Technology, Shijiazhuang 050018, P. R. China
  • Received:2009-11-09 Revised:2010-01-31 Published:2010-04-02
  • Contact: ZHAO Xiong-Yan


We prepared a novel plasma polyquinoline derivative thin film, plasma-polymerized 3-cyanoquinoline (PP3QCN). Fourier transform infrared spectroscopy (FT-IR), UV-visible (UV-Vis) absorption spectroscopy, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) characterization revealed that the plasma polymerization conditions affected the chemical structure, surface composition, morphology, and dielectric property of the plasma-deposited films. A smooth and homogenous PP3QCN film with a large π-conjugated system and a high retention of the aromatic ring structure of the monomer was obtained at a low discharge power of 10 W. At 25 W, more severe monomer molecular fragmentation was apparent during the plasma polymerization and thus the conjugation length of the PP3QCN films decreased because of the formation of a non-conjugated polymer. A low dielectric constant of 2.45 was obtained for the as-grown PP3QCN thin filmdeposited at 10 W.

Key words: Plasma polymerization, Low dielectric constant, 3-Cyanoquinoline, Integrated circuit