二硫化钼二维原子晶体化学掺杂研究进展

doi:10.3866/PKU.WHXB201606162

Abstract

Abstract:

Semiconducting, two-dimensional (2D) transition metal dichalcogenides (TMDCs) such as molybdenum disulfide (MoS₂) have attracted significant attention because of their unique properties and promising applications in electronic and optoelectronic devices. However, the controllable tuning of the properties of 2D MoS₂ remains a key challenge with regard to its practical application. Among various approaches to addressing this issue, chemical doping is one of the most efficient. This review focuses on three major doping strategies, which are surface charge transfer, in-plane substitution and interlayer intercalation. We discuss the principles, latest progress and limitations of these doping approaches. Finally, we summarize the current challenges and opportunities associated with the chemical doping of 2D MoS₂.

Key words: Two-dimensional molybdenum disulfide, Chemical doping, Surface adsorption, In-plane substitution, Intercalation

Lei XING,Li-Ying JIAO. Recent Advances in the Chemical Doping of Two-Dimensional Molybdenum Disulfide[J]. Acta Phys. -Chim. Sin. 2016, 32(9), 2133-2145. doi: 10.3866/PKU.WHXB201606162

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Recent Advances in the Chemical Doping of Two-Dimensional Molybdenum Disulfide

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