Abstract:

The sintering condition was studied how to influence the performance of indium-zinc-oxide (IZO) target and thin film transistor (TFT) in this paper. IZO targets was prepared by hot-pressing sintering using mixed power (20% (w, mass fraction) In₂O₃), then fabricated TFT with above sintering targets. X-ray diffraction (XRD) patterns & scanning electron microscopy (SEM) images showed targets had good crystallinity and elements were uniformly distributed. The target was typical densification process with sintering temperature of 850 ℃. The volatilization of In₂O₃ undermined the densification of the target, with condition of 900 ℃-60 min. It can be seen that increase of sintering temperature and elongation of preserving time could inhibit the In₂O₃ volatilization, facilitated the sintering densification of IZO target and formed the InZnO_x crystal phase, thereby increased the density of the target. IZO TFTs′ performance showed the sputtering deteriorates the film quality with low-density target, and the grain of the high-density target was slightly abnormal, which resulted in deterioration of the film uniformity, all reduced the performance of TFT. Therefore, an appropriate high-density target was essential for the preparation of IZO-TFT."

Key words: Thin film transistors, IZO, Hot-pressing sintering, Target, Magnetron sputtering